http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007254244-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-38 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0955 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0035 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-095 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-26 |
| filingDate | 2006-05-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eee565e0921f3f7c3d4efebf21724b53 |
| publicationDate | 2007-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-2007254244-A1 |
| titleOfInvention | Method of forming a resist structure |
| abstract | The present invention includes a method of forming a resist structure comprising depositing a first photoresist material over a first layer. Selectively exposing portions of the first layer to light to provide exposed portions and unexposed portions in the first photoresist layer. Without developing the first photoresist layer, depositing a second photoresist layer over the first photoresist layer including both exposed portions and unexposed portions. The second photoresist layer being capable of crosslinking in the presence of an acid. Treating the first photoresist layer to cause an acid from only one of the exposed portions or unexposed portions of the first photoresist layer producing a plurality of crosslinked portions of the second photoresist layer. Thereafter, developing the second photoresist layer to remove uncrosslinked portions. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111615666-A |
| priorityDate | 2006-05-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 45.