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filingDate 2005-08-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2007-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2007252135-A1
titleOfInvention Nitride Semiconductor Light Emitting Device and Fabrication Method Thereof
abstract A nitride semiconductor light-emitting device according to the present invention comprises a first nitride semiconductor layer; an active layer formed on the first nitride semiconductor layer; a second nitride semiconductor layer formed on the active layer; and a third nitride semiconductor layer having AlIn, which is formed on the second nitride semiconductor layer. And a nitride semiconductor light-emitting device comprises a first nitride semiconductor layer; an n-AlInN cladding layer formed on the first nitride semiconductor layer; an n-InGaN layer formed on the n-AlInN cladding layer; an active layer formed on the n-InGaN layer; a p-InGaN layer formed on the active layer; a p-AlInN cladding layer formed on the p-InGaN layer; and a second nitride semiconductor layer formed on the p-AlInN cladding layer.
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