| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-1047 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31695
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02321
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76826
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02203
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02216
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7682
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76814
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76807 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 |
| filingDate |
2006-04-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ef01edac0f2cb613f4640fec5257d302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e58280734063e355ddbca26a38154bcd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ed2fd49dfd1b77b969547970e19956b0 |
| publicationDate |
2007-10-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2007249179-A1 |
| titleOfInvention |
Method of forming a low-k dielectric layer with improved damage resistance and chemical integrity |
| abstract |
A method of forming a low-k dielectric layer or film includes forming a porous low-k dielectric layer or film over a wafer or substrate. Active bonding is introduced into the porous low-k dielectric layer or fihm to improve damage resistance and chemical integrity of the layer or film, to retain the low dielectric constant of the layer and film after subsequent processing. Introduction of the active bonding may be accomplished by introducing OH and/or H radicals into pores of the porous low-k dielectric layer or film to generate, in the case of a Si based low-k dielectric layer or film, Si—OH and/or Si—H active bonds. After further processing of the low-k dielectric film, the active bonding is removed from the low-k dielectric layer or film. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2012264287-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2014143337-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010187694-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2012319285-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10734278-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8772154-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8354341-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103871962-A |
| priorityDate |
2006-04-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |