| abstract |
A method for fabricating a thin-film transistor contains successively forming four thin films on a substrate and performing an etching process to pattern the four thin films, wherein the four thin films are a first conductive layer, a first insulation layer, a semiconductor film, and a metal-containing sacrificial layer from bottom to top. A second insulation layer is formed on the substrate and the metal-containing sacrificial layer. Then, a lift-off process is performed to the metal-containing sacrificial layer for simultaneously removing the metal-containing sacrificial layer and the second insulation layer positioned on the metal-containing sacrificial layer. Finally, a second conductive layer is formed on the semiconductor layer for forming a source electrode and a drain electrode. |