http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007243487-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0c468e687b43595cae7cb1c2667678f1 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-78 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03C1-00 |
| filingDate | 2007-04-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ee8261d442592c3135cc6ee8ea552398 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_34f374e059249e3e555058b5b6865507 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_daacc545b49e8aaefa6157390b73e151 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_55970d3217fb54cc39b462664fc65171 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f8d8019315a89ffd90aec959304ce9ca http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3977f12c2c2419ca5ef0fdd18a97c127 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_578e0d37189db5c4fe874f8b5219eb48 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_92fd56e1c34a88f96046aa84aa4fd7d3 |
| publicationDate | 2007-10-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-2007243487-A1 |
| titleOfInvention | Forming method of resist pattern and writing method of charged particle beam |
| abstract | The present invention realized the excellent dimensional accuracy of resist patterns by using a chemical amplification type resist whose effective acid diffusion length is shorten without decreasing throughput of a charged particle beam writing system. n The resist pattern forming method of the present invention features that the amount of the acid diffusion inhibitor in a chemical amplification type resist in order to shorten the effective acid diffusion length increases and the current density of a charged particle exposure in order to prevent the throughput drop of the writing system increases. n The present invention provides a resist pattern forming method comprising a process of coating a chemical amplification type resist on the surface of a processing substrate, a process of exposing patterns by using charged particle beams on the surface of the said substrate, a process of post exposure baking the chemical amplification type resist after the exposure, and a process of developing the said chemical amplification type resist. n The said method features that the amount of an acid diffusion inhibitor in the said resist increases and the current density of the charged particle exposure also increases. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008286687-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8563953-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8452074-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7541132-B2 |
| priorityDate | 2006-04-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 57.