| abstract |
A CMOS device has PMOS and NMOS transistors with different gate structures overlying a semiconductor device. A first gate structure overlying the PMOS device region has a first gate dielectric layer overlying the semiconductor substrate, and a first gate conductor overlying the first gate dielectric layer. A second gate device region overlying the NMOS device region has a second gate dielectric layer overlying the semiconductor substrate, and a second gate conductor overlying the first gate dielectric layer. The first gate conductor has a silicon-based material layer, and the second gate conductor has a metal-based material layer. |