http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007221509-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5db580deca7130dbe51805c6c608b35 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C22B5-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02063 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76807 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76814 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76829 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76834 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76835 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C22B5-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C22B5-10 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25C3-00 |
| filingDate | 2006-09-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7c560ad17b395855aa6a3b1cee8838a7 |
| publicationDate | 2007-09-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-2007221509-A1 |
| titleOfInvention | Method for reducing metal, multilayer interconnection structure and manufacturing method for the same, and semiconductor device and manufacturing method for the same |
| abstract | To provide a reliable, efficient method for reducing oxidized metals used upon manufacturing of the multilayer interconnection structure, semiconductor device, etc. With this method vapor containing at least a carboxylic acid ester is hydrolyzed by water vapor to reduce oxidized metal. The multilayer interconnection manufacturing method of the present invention includes at least film formation step, interconnection formation step, and reduction step using the metal reduction method of the present invention. The multilayer interconnection structure of the present invention is manufactured by the multilayer interconnection structure manufacturing method of the present invention. The semiconductor device manufacturing method of the present invention includes at least film formation step, patterning step, interconnection formation step, and reduction step using the metal reduction method. The semiconductor device of the present invention includes at least multilayer interconnection structure of the present invention and is formed using the semiconductor device manufacturing method of the present invention. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009325393-A1 |
| priorityDate | 2006-03-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 111.