| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a4c337c924b13ed8bd9e83040b9bee51 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-513 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32055
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28035 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate |
2006-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a83b80f8f8dfca10b235e2053a949c3e |
| publicationDate |
2007-09-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2007218639-A1 |
| titleOfInvention |
Formation of a smooth polysilicon layer |
| abstract |
Embodiments of the invention provide a polysilicon layer on a high-k dielectric layer with a smooth upper surface. The polysilicon layer may be formed by pretreating a wafer with a substrate, the high-k dielectric layer on the substrate and a capping layer on the high-k dielectric layer at a first temperature in a chemical vapor deposition chamber. The polysilicon layer may then be formed on the capping layer in the chemical vapor deposition chamber at a second temperature higher than the first temperature. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9202809-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9508815-B2 |
| priorityDate |
2006-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |