http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007218629-A1

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36f8253f3d0d59bcd9259217d4385d10
classificationCPCAdditional http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-50
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-036
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
filingDate 2006-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8ae67221964ac5a3ddfd5f604c5bc20c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2dfb3746c9abd194427f0a02a764ab35
publicationDate 2007-09-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2007218629-A1
titleOfInvention Method of fabricating an integrated memory device
abstract Method of fabricating an integrated memory device including the steps of providing a semiconductor substrate, including an array region and a support region; providing GC-lines in said array region and in said support region, wherein the GC-lines in said support region have a first height; providing in the array region bit line contacts projecting above said GC-lines, wherein said bit line contacts have a second height being higher than said first height; providing a first isolation layer, the maximum height of said GC-lines in said support region including the coverage of said first isolation layer being lower than said second height; providing a second isolation layer on said first isolation layer; and polishing said first isolation layer and said second isolation layer, such that a planar surface of the integrated memory device is provided and such that said bit line contacts are exposed.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110223982-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10763264-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10453849-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9825031-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10636671-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019273083-A1
priorityDate 2006-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6124157-A
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559478
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID24404
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID454436140
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID3084099
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID425762086
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID457707758
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID23964
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419555680
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559585
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419522015
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID24261
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID24823
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559532
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID6517
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5462311

Total number of triples: 35.