| abstract |
Aiming at providing a method of fabricating a light emitting device having an AlGaInP light emitting section, less causative of crack by cleavage, on the edge portions on the back surface of the device chip in process of dicing or breaking, a light emitting device wafer is diced along a dicing line inclined at an angle of 15° to 30°, both ends inclusive, away from a dicing line angle reference direction defined as the < 110 > direction on the ( 100 ) main surface. |