http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007200177-A1

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filingDate 2007-02-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2007-08-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2007200177-A1
titleOfInvention Semiconductor laser device and semiconductor laser device manufacturing method
abstract A semiconductor laser device comprising: an active layer, a semiconductor layer formed on the active layer and having a wurtzite structure, wherein a principal surface of the active layer is substantially perpendicular to a (0001) surface of the semiconductor layer, a current path portion in the semiconductor layer extends along a crystal orientation substantially parallel to the (0001) surface of the semiconductor layer, and an inner angle of the principal surface to a first side surface is different from an inner angle of the principal surface to a second side surface, the first side surface is a side surface of the current path portion and the second side surface is opposite to the first side surface.
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009267100-A1
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