| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1da0f75de8c6b146e16e941cd05b2a0a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1934bf9692082ddd84cd14dad5fa0509
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e09c94f067556ece61dad1b8731af0a0 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0214
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02167
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3185
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02271
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-022
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8244 |
| filingDate |
2006-02-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c8c5497f1fb9016e26c2de303c85c87e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ed2d5b21d1273b707ddfc9723d779d3d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e9f26724ef63ec704e46ae54312918a7 |
| publicationDate |
2007-08-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2007196977-A1 |
| titleOfInvention |
Capacitance dielectric layer, capacitor and forming method thereof |
| abstract |
A capacitance dielectric layer is provided. The capacitance dielectric layer includes a first dielectric layer, a second dielectric layer and a silicon nitride stacked layer. The silicon nitride stacked layer is disposed between the first dielectric layer and the second dielectric layer. The structure of the capacitance dielectric layer permits an increase in the capacitance per unit area by decreasing the thickness of the capacitance dielectric layer and eliminates the problems of having a raised leakage current and a diminished breakdown voltage. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11495470-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10555412-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9378943-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11569066-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10791617-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10448494-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10916408-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008277761-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9455137-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11791138-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11476145-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11699572-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10937678-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10448495-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11284500-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I736785-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11462389-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10811296-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11462388-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10510575-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11776789-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11476090-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2012184110-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11508554-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10923321-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2019060029-A1 |
| priorityDate |
2006-02-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |