| abstract |
The present invention provides a method for manufacturing an interconnect and an integrated circuit. The method for manufacturing the interconnect, in one embodiment, includes forming a first metal feature ( 310 ) over a substrate, subjecting the first metal feature ( 310 ) to a hydrogen containing plasma ( 410 ), the hydrogen containing plasma ( 410 ) configured to remove organic residue ( 320 ) from an exposed surface of the first metal feature ( 310 ), and electroless depositing a second metal feature ( 510 ) on the first metal feature ( 310 ) having been subjected to the hydrogen containing plasma ( 410 ). |