http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007145600-A1

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f07454350ec43174ce747c1ae1fffe9d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2d4cbabb07a86ecb9db379eade473c78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b551111d7e851016bc5fa89e7955a2d4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e825c68133fd2c3e61cfe441ea57e7f2
classificationCPCAdditional http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-1089
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53295
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76834
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76838
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76873
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76814
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-48
filingDate 2006-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4e556b22299e047972ce0c7822d8f6af
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_429913da015a4b5c585f7538ddcea2f5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_552e06128b3336ac62db4b2fdcf379ef
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e1bcb32d6f58c0cb8bc9b1780fc96d65
publicationDate 2007-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2007145600-A1
titleOfInvention Semiconductor device and manufacturing method thereof
abstract A semiconductor device includes an embedded wire in a first wire trench formed in a first interlayer dielectric film, the embedded wire having a barrier metal, a first seed film, a second seed film, and a copper film. The first seed film is formed by a copper film containing metal, and the second film is formed by a copper film. The second seed film suppresses that the metal contained in the first seed film diffuses into a wiring material film in a manufacturing process.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2012273949-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8753978-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101742825-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I459508-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2259303-A3
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102130046-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9633896-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9379006-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014131874-A1
priorityDate 2005-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID14829
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID418354341
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559214
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID977
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID23978
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419523291

Total number of triples: 39.