abstract |
A semiconductor device includes an embedded wire in a first wire trench formed in a first interlayer dielectric film, the embedded wire having a barrier metal, a first seed film, a second seed film, and a copper film. The first seed film is formed by a copper film containing metal, and the second film is formed by a copper film. The second seed film suppresses that the metal contained in the first seed film diffuses into a wiring material film in a manufacturing process. |