| abstract |
There is provided an underlayer coating forming composition for lithography, and an underlayer coating having a high dry etching rate compared with photoresist, and causing no intermixing with the photoresist, which are used in lithography process of manufacture of semiconductor device. Concretely, it is an underlayer coating forming composition for lithography comprising a dextrin ester compound that at least 50% of hydroxy groups in dextrin is converted into ester groups, a crosslinking compound, and an organic solvent. |