| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b802d250de987c5c80b2cc922b06f26b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_365be0269db798debd88211b35a565dc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_adddd4298d0f7c8765acfc214cac8d50 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y15-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y30-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N27-4141
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K19-20 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-94 |
| filingDate |
2005-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_70465ad614d0e58e5400ba43f4987db2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_07acff98ac1b08ede5680e058d131aa7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8ad55b094e27d8901ea6b445bc6c5021 |
| publicationDate |
2007-06-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2007126061-A1 |
| titleOfInvention |
Structure for and method of using a four terminal hybrid silicon/organic field effect sensor device |
| abstract |
A four terminal field effect device comprises a silicon field effect device with a silicon N-type semiconductor channel and an N+ source and drain region. An insulator is deposited over the N-type semiconductor channel. An organic semiconductor material is deposited over the insulator gate forming a organic semiconductor channel and is exposed to the ambient environment. Drain and source electrodes are deposited and electrically couple to respective ends of the organic semiconductor channel. The two independent source electrodes and the two independent drain electrodes form the four terminals of the new field effect device. The organic semiconductor channel may be charged and discharged electrically and have its charge modified in response to chemicals in the ambient environment. The conductivity of silicon semiconductor channel is modulated by induced charges in the common gate in response to charges in the organic semiconductor channel. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8698319-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006255336-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2020400600-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015168327-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2010057879-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011031986-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11650176-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11331019-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10866204-B2 |
| priorityDate |
2005-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |