| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_64310887eb746085caf61f1f53727cd2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6d8a61b0d42555fb09a0fd09f42c546e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1c8866eec47ed946faf95065c5aa48e2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_cf60c50ebbcc105ad4ec6316edfa3078 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-1089 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76865
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76868
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76873 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-4763 |
| filingDate |
2005-11-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9eff874bbac4f22d88ed7b7ed2a539bd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dd8d39a9793d37a2ff1e7c24bec3c2ca
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_35f5dd95fd7e2ebf44ec28bdd36dde7a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_539f31bce9a6a9c91dcecb9b8a306cd4 |
| publicationDate |
2007-05-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2007117377-A1 |
| titleOfInvention |
Conductor-dielectric structure and method for fabricating |
| abstract |
A conductor-dielectric interconnect structure is fabricated by providing a structure comprising a dielectric layer having a patterned feature therein; depositing a plating seed layer on the dielectric layer in the patterned feature; depositing a sacrificial seed layer on the plating seed layer in the via; reducing the thickness of the sacrificial seed layer by reverse plating; and plating a conductive metal on the sacrificial seed layer in the patterned feature. Also provided is a dielectric layer having a via therein; a plating seed layer on the dielectric layer in the patterned feature; and a discontinuous sacrificial seed layer located in the patterned feature. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I384552-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8110497-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I384553-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007246792-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010314766-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7402883-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010176514-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8232195-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7745324-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010167529-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8390123-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11317505-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008242082-A1 |
| priorityDate |
2005-11-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |