| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_97411dac2a9aceddcf1140e97aad0a57 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76883
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2885
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D5-611
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D5-605
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D5-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D5-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D5-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D5-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D7-123 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25D5-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25D5-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25D7-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-288
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25D5-10 |
| filingDate |
2006-11-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dc7ba5bdc56999ab283c1303394e17a2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7fae983e92ac287cd26cf79ddd70d3d8 |
| publicationDate |
2007-05-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2007114133-A1 |
| titleOfInvention |
Method for filling recessed micro-structures with metallization in the production of a microelectronic device |
| abstract |
A method for filling recessed micro-structures at a surface of a semiconductor wafer with metallization is set forth. In accordance with the method, a metal layer is deposited into the micro-structures with a process, such as an electroplating process, that generates metal grains that are sufficiently small so as to substantially fill the recessed micro-structures. The deposited metal is subsequently subjected to an annealing process at a temperature below about 100 degrees Celsius, and may even take place at ambient room temperature to allow grain growth which provides optimal electrical properties. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7465661-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004241965-A1 |
| priorityDate |
1998-02-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |