| abstract |
A method for growing planar, semi-polar nitride film on a miscut spinel substrate, in which a large area of the planar, semi-polar nitride film is parallel to the substrate's surface. The planar films and substrates are: (1) {10 1 1} gallium nitride (GaN) grown on a {100} spinel substrate miscut in specific directions, (2) {10 1 3} gallium nitride (GaN) grown on a {110} spinel substrate, (3) {11 2 2} gallium nitride (GaN) grown on a {1 1 00} sapphire substrate, and (4) {10 1 3} gallium nitride (GaN) grown on a {1 1 00} sapphire substrate |