| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_69aad234dbb89ba16a8df472ba51fba6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5852eeae645a65a46666203407d934e5 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-167
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7378
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66242 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8249 |
| filingDate |
2005-11-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_64307c6400c553e4498b4d551ecee48b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fc1883151a9914082a1831ac02286f23 |
| publicationDate |
2007-05-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2007111428-A1 |
| titleOfInvention |
Bandgap engineered mono-crystalline silicon cap layers for SiGe HBT performance enhancement |
| abstract |
A method for fabricating a heterojunction bipolar transistor (HBT) is provided. The method includes providing a substrate including a collector region; forming a compound base region over the collector region; forming a cap layer overlying the compound base region including doping the cap layer with a pre-determined percentage of at least one element associated with the compound base region; and forming an emitter region over the cap layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010044796-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010320571-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7929321-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8482101-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015263095-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008128749-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9425260-B2 |
| priorityDate |
2005-11-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |