http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007109007-A1

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filingDate 2005-11-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2007-05-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2007109007-A1
titleOfInvention Elastic metal gate MOS transistor for surface mobility measurement in semiconductor materials
abstract A semiconductor wafer or sample having a substrate of semiconducting material is tested by compressing a dielectric between three electrically conductive contacts and a top surface of the semiconductor wafer or sample substrate. The dielectric has a thickness that permits tunneling current to flow therethrough without damaging the dielectric. A first electrical bias is applied to a pair of adjacent contacts and a second electrical bias, such as ground reference, is applied to the other contact whereupon an inversion layer forms in the semiconductor wafer or sample. A value of a current that flows in the semiconductor wafer or sample substrate and across the dielectric, in the form of a tunneling current, is measured in response to the applied electrical biases. A surface mobility of minority carriers in the semiconductor wafer or sample is determined as a function of the applied electrical biases and the value of the measured current.
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