| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b3310ea86f3c492f6c09d7be6592866d |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-007 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0242
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-403
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-02 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate |
2006-11-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c7d6f955ec33d257ea18a36365c11669
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_760003d290bf293f32fe4f0fcc59cc15
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_506964f11d88143b6a8568ca015d3ba1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2561ac09af656317ce705529d43bc4df |
| publicationDate |
2007-05-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2007105259-A1 |
| titleOfInvention |
Growth method of indium gallium nitride |
| abstract |
A method for growing a high quality indium gallium nitride by metal organic chemical vapor deposition (MOCVD) is provided. In the method, the indium gallium nitride grows at a growth rate of at least about 1.5 nm/min at a temperature of at least about 800° C. while an internal pressure of an MOCVD reactor is maintained at about 400 mbar or less. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10000381-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016009556-A1 |
| priorityDate |
2005-11-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |