| abstract |
A method for low-temperature epitaxy at the surface of at least one plate made of a pure silicon- or silicon alloy (SiGe, SiC, SiGeC . . . )-based material, in a chemical vapor deposition (CVD) system, in particular a rapid thermal (RTCVD) system, which method includes the following steps: loading the plate into the equipment, at a loading temperature, preparing the surface for the deposition of new chemical species, and after preparing the surface, performing the deposition under low-temperature epitaxy conditions (>750° C.), in which method the preparation of the surface includes a step of passivation of the surface by injection of an active gas, or gas mixture. |