| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c2f092a035fb1a8cc488abbd044a0e65 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11B9-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C23-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11B9-149 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11B9-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-0004
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-02 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C11-00 |
| filingDate |
2005-07-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fd6ba8e4459fa91869650170ce1cac44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5822bf222f881a1667a35a1cb1691b48
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_99a2ee33689d51e43cca998801f229f3 |
| publicationDate |
2007-02-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2007041237-A1 |
| titleOfInvention |
Media for writing highly resolved domains |
| abstract |
Systems in accordance with the present invention can include a tip contactable with a media, the media including a phase change material in an embodiment (or polarity-dependent memory material or other memory material in other embodiments) disposed between a substrate and an overcoat. The overcoat is a co-deposited film having a conductive portion and a substantially non-conductive portion, the co-deposited film conducting current more efficiently through the overcoat than across the overcoat. The overcoat substantially directs the current so that a portion of the phase change material directly beneath the tip is heated to a sufficient temperature such that the structure of the material become disordered. The current is then removed from the phase change material, which is quickly cooled to form an domain having a resistivity larger than the crystalline bulk structure. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008023885-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10311949-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008233672-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008174918-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008074984-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008074792-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010039919-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008001075-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009294028-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007121477-A1 |
| priorityDate |
2005-07-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |