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publicationDate 2007-02-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2007040203-A1
titleOfInvention Semiconductor device capacitors with oxide-nitride layers and methods of fabricating such capacitors
abstract Capacitors having upper electrodes that include a lower electrode, a dielectric layer and an upper electrode that includes a conductive metal nitride layer and a doped polysilicon germanium layer are provided. At least part of the conductive metal nitride layer is oxidized and/or at least part of the dielectric layer is nitridized.
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017186752-A1
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