| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S977-861
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01Q80-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11B9-02 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y35-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01Q70-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01Q70-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11B11-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11B9-1409
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11B9-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01Q70-10 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11B9-14 |
| filingDate |
2006-06-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6fb3e5e5f14d2eae040d93ad574028d1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_540335c1d97c9b227b48075c030ab01b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_51278d71276f1843869bbd112d36f486
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cfb7b6a4ea7d33b1b9c8d505e438e98b |
| publicationDate |
2007-02-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2007040116-A1 |
| titleOfInvention |
Semiconductor probe having resistive tip with low aspect ratio and method of fabricating the same |
| abstract |
A semiconductor probe having a resistive tip with a low aspect ratio and a method of fabricating the semiconductor probe are provided. The semiconductor probe includes a resistive tip and a cantilever having an end portion on which the resistive tip is located. The resistive tip doped with a first impurity includes a resistive region formed at a peak of the resistive tip and lightly doped with a second impurity opposite in polarity to the first impurity, and first and second semiconductor electrode regions formed on inclined surfaces of the resistive tip and heavily doped with the second impurity. The height of the resistive tip is less than the radius of the resistive tip. Accordingly, the spatial resolution of the semiconductor probe is improved. |
| priorityDate |
2005-08-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |