| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fd83260a96356882b5f50dd097411a72 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-3011
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76826
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76831
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53295
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5226
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76804
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76834 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-4763 |
| filingDate |
2006-10-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_049bb5b10d04bfc31a50586bf8354603
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bff9e4317279eb5d270e0aff201d8f30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fc560be91475c8517df195dfee74d0a4 |
| publicationDate |
2007-02-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2007032070-A1 |
| titleOfInvention |
Semiconductor device and method for manufacturing same |
| abstract |
A technology for inhibiting the dielectric breakdown occurred in a semiconductor device is provided. A semiconductor device includes a semiconductor substrate (not shown), an interlayer insulating film 102 formed on the semiconductor substrate and a multiple-layered insulating film 140 provided on the interlayer insulating film 102. The semiconductor device also includes an electric conductor that extends through the multiple-layered insulating film 140 and includes a Cu film 120 and a barrier metal film 118. The barrier metal film 118 is covers side surfaces and a bottom surface of the Cu film 120. An insulating film 116 is disposed between the multiple-layered insulating film 140 and the electric conductor (i.e., Cu film 120 and barrier metal film 118 ). |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010167531-A1 |
| priorityDate |
2004-09-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |