http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007015295-A1

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ad4ab3611e10f5b00a40797493451d66
classificationCPCAdditional http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-12
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66
filingDate 2005-07-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e81b61748494608b00fd84499e595b8e
publicationDate 2007-01-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2007015295-A1
titleOfInvention Methods and systems for characterizing semiconductor materials
abstract Methods for determining parameters of a semiconductor material, in particular non-classical substrates such as silicon-on-insulator (SOI) substrates, strained silicon-on-insulator (sSOI) substrates, silicon-germanium-on-insulator (GOI) substrates, and strained silicon-germanium-on-insulator (sGeOI) substrates. The method provides steps for transforming data corresponding to the semiconductor material from real space to reciprocal space. The critical points are isolated in the reciprocal state and corresponding critical energies of the critical points are determined. The difference between the critical energies may be used to determine a thickness of a layer of the semiconductor material, in particular, a quantum confined layer.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20170092573-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102544026-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10663504-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2016077617-A1
priorityDate 2005-07-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6326619-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5796983-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5907401-A
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5461123
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559541

Total number of triples: 22.