| abstract |
Systems in accordance with the present invention can include a tip contactable with a media, the media including a substrate, a conductive under-layer disposed over the substrate, and a polarity dependent memory switching media disposed over the under-layer. In an embodiment, the polarity dependent memory switching media is continuous and the media either grounded or electrically connected with a voltage source such that when the tip is placed in contact with the media and a forward voltage is applied to the tip, causing the polarity dependent memory switching media to form an Ag dendritic structure bridging the tip and the under-layer. The bridging causes a reduction in resistance corresponding to a “1” or a “0.” In an alternative embodiment, an insulating material can be disposed over the substrate such that a plurality of cells is formed, at least one of the cells including the polarity dependent memory switching media. The media is either grounded or electrically connected with a voltage source such that when the tip is placed in contact with the at least one cell and a forward voltage is applied to the tip, the polarity dependent memory switching media within the at least one cell forms an Ag dendritic structure bridging the tip and the under-layer. The bridging causes a reduction in resistance corresponding to a “1” or a “0.” |