| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-318
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28562 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-033
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-91
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B99-00 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 |
| filingDate |
2006-06-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5d81edbfb0bd232f90fee4c6059ab81e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6c7208685c28b03ac776fb829818c05f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_de270e4fdaf36e4ec655b89016754bea
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_42ec3e8bbf36878e3d3e6aac4f18e74e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c9d6c5261ebaacb00bd4417a8c644ac6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8fe32848898b1888f985611dd0e47841
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_66840f157e0987cffbab9f1492972bef |
| publicationDate |
2006-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2006292810-A1 |
| titleOfInvention |
Method of manufacturing a capacitor |
| abstract |
In methods of manufacturing capacitors, a first metal compound may be deposited on a substrate using first and second source gases. The first and the second source gases may be provided onto the substrate by a first flow rate ratio in which a deposition rate of the first metal compound by surface reaction between the source gases is higher than that by mass transfer between the source gases. A second metal compound may be deposited on the first metal compound and undesired materials may be removed by providing the source gases with a second flow rate ratio different from the first flow rate ratio. Depositing the first and the second metal compounds may be repeated to form a lower electrode. A dielectric layer and an upper electrode may be formed on the lower electrode. Accordingly, permeation of an etching liquid or gas may be reduced during an etching process. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9349736-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10991574-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015171088-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11682555-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11380486-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104716019-A |
| priorityDate |
2005-06-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |