| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_cf210af59f84416c74a5bb6299677c46 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-2648
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-14 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26 |
| filingDate |
2006-03-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0ba949a271627338e8182565776fd2ab |
| publicationDate |
2006-12-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2006279311-A1 |
| titleOfInvention |
Semiconductor wafer metrology apparatus and methods |
| abstract |
The invention relates to the use of the metrology methods and the related apparatus disclosed herein that incorporate thermal treatment devices and methods that improve defect detection. Specifically, in one aspect the invention relates to method of thermally treating a semiconductor wafer such that an acceleration of interstitial defect migration is achieved while leaving vacancy defects substantially unaltered. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104124309-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007287205-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7727783-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-116540076-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007000434-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015268143-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9383300-B2 |
| priorityDate |
2005-03-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |