| abstract |
A semiconductor device and a method thereof are disclosed. In the example method, a mold layer having an opening may be formed on a substrate. A conductive etchable pattern (e.g., a preliminary conductive pattern, a lower electrode pattern, etc.) may be formed within the opening. The mold layer may be reduced so as to expose a portion of the conductive etchable pattern and less than all of the exposed portion of the conductive etchable pattern may be etched such that the etched conductive etchable pattern has a reduced thickness. The example semiconductor device may include the etched conductive etchable pattern as above-described with respect to the example method. |