| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ca2d9413412d93507d7a4f69487643b8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_802ab3e244090eab03149db3cf75b513
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2f60fb307edd86822810e4d3e548931c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ec3db58e46f2f0d59b40d89807495af2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e92e27d26467d09960556e8d17b0868d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_667357f23c1734f7cca9b2d6d3e89d68
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_97f0cd41de634508b3ca9171d0010673 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76801 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02304
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02282
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3122
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-401
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31633
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02137
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02362 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-312
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-42
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52 |
| filingDate |
2006-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a08d1290bdf56219d294b6e23f0fdb4f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_36e375014cbe3ed3601222019a3bbdd7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3975cf94b2946ee54ce16aa57ca9a5b1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_294276edde68ac92b793f3b5807f831a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e9e9c0f6cbc7a44ff041a4852158c016
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c77262ea0b43336c8def24d6083b985b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e637065c5e2ae8b48236fb4cc6229f13 |
| publicationDate |
2006-11-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2006255466-A1 |
| titleOfInvention |
Carbon containing silicon oxide film having high ashing tolerance and adhesion |
| abstract |
An insulating film used for an interlayer insulating film of a semiconductor device and having a low dielectric constant. The insulating film comprises a carbon containing silicon oxide (SiOCH) film which has Si—CH2 bond therein. The proportion of Si—CH2 bond (1360 cm−1) to Si—CH3 bond (1270 cm−1) in the insulating film is preferably in a range from 0.03 to 0.05 measured as a peak height ratio of FTIR spectrum. The insulating film according to the present invention has higher ashing tolerance and improved adhesion to SiO2 film, when compared with the conventional SiOCH film which only has CH3 group. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10804145-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103165520-A |
| priorityDate |
2003-01-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |