| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80e90d0a226907f6624fa1a29dc372a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_acc9d4766581a70534b83976da5bc1e2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8e828a79b407c44a90a59247e0f82b79 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78681
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-484
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78651
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K19-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-231
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-466
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1214 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12 |
| filingDate |
2006-04-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_09368ae632c951e30efc8b2bd8218806
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f4967aae9c94da5045aa18ac42dd8989
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6daecbba0e2007aa6afea208c5bec7e6 |
| publicationDate |
2006-10-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2006237789-A1 |
| titleOfInvention |
Thin film transistor (TFT) and flat panel display including the TFT |
| abstract |
A Thin Film Transistor (TFT) that can reduce leakage current and can prevent crosstalk between adjacent TFTs includes: a substrate; a gate electrode disposed on the substrate; a source electrode and a drain electrode separated from each other and insulated from the gate electrode; and a semiconductor layer which is insulated from the gate electrode, contacts each of the source and drain electrodes, and has grooves that separate at least a region of the semiconductor layer between the source and drain electrodes from the adjacent TFT. Each groove passes at least a portion of the semiconductor layer corresponding to the source and drain electrodes, and a projection image generated when each groove that passes at least a portion of the semiconductor layer corresponding to the source and drain electrodes is projected onto the source and drain electrodes covers the source and drain electrodes except for a portion of the source electrode that faces the drain electrode and a portion of the drain electrode that faces the source electrode. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I503989-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10141343-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9111806-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10692894-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10978490-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9647137-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11594555-B2 |
| priorityDate |
2005-04-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |