| abstract |
Provided are compositions for cleaning a semiconductor device that comprises (a) an inorganic acid in an amount ranging from 10 to 90 wt %, (b) a hydrofluoric acid compound in an amount ranging from 0.0001-1 wt %, (c) an additive in an amount ranging from 0-5 wt %, and (d) residual water to remove residuals of photoresist and metallic etching polymers which are generated in a dry etching process and an ashing process for manufacturing fine patterns of semiconductor device. |