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filingDate 2004-05-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2228b0b32c49d293d6fd063a7ed280c1
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publicationDate 2006-09-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2006209529-A1
titleOfInvention Ito film treated by nitrogen plasma and the organic luminescent device using the same
abstract Disclosed are an Indium Tin Oxide (ITO) film, wherein nitrogen-containing compounds produced by reactions of nitrogen with at least one atom selected from the group consisting of In, Sn and O atoms which are constitutional elements of ITO, or deposited nitrogen-containing compounds are present on a surface of the ITO film; and a method for preparing an ITO film, comprising the step of treating a surface of the ITO film with nitrogen plasma. An organic electroluminescent device using the ITO film provided by the present invention as an anode shows a low voltage, a high efficiency and a long lifetime.
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