| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fd83260a96356882b5f50dd097411a72 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1083
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823807
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823814
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26513
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2658 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-425 |
| filingDate |
2005-09-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b64258efe02218f862efecdf8264dcc3 |
| publicationDate |
2006-09-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2006199345-A1 |
| titleOfInvention |
Method for manufacturing field effect transistor |
| abstract |
The manufacturing stability can be improved while effectively inhibiting the short-channel effect in the transistor according to the present invention. A halo impurity having a conductivity type opposite to a first conductivity type of a first impurity is ion-implanted into the silicon substrate 101, and thereafter the first impurity having the first conductivity type, is ion-implanted and then a flash lamp annealing is conducted to form a p-type halo region 113 and a n-type extension region 111. Then, the second impurity having the first conductivity type is ion-implanted into the silicon substrate 101, and then a flash lamp annealing is conducted to form a n-type source/drain region 109. Then, the impurity contained in the silicon substrate 101 is activated via spike RTA. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8058134-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010210086-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008242039-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8273633-B2 |
| priorityDate |
2005-03-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |