http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006192105-A1

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filingDate 2006-04-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2006-08-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2006192105-A1
titleOfInvention Gating device and driver for modulation of charged particle beams
abstract By connecting the Bradbury-Nielson gate (BNG) directly to a driver without a transmission line, distortion of the voltage waveform experienced a the BNG are much reduced. Because the magnitude of the modulation defects grows as the applied modulation voltage is increased, Bradbury-Nielson gates with finer wire spacing such as 100 microns, and operating at 10 to 15 V, significantly better signal-to-noise ratios are achieved. HT-TOFMS data were also post processed using an exact knowledge of the modulation defects.
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