| abstract |
A semiconductor device has a first insulating film formed on a substrate and having a first trenched portion, a second insulating film formed on the first insulating film, a third insulating film formed on the second insulating film and having a specific dielectric constant of 3 or less, and a first interconnection formed in the first trenched portion. The second insulating film is made of a compound containing silicon, oxygen, carbon, and nitrogen and the composition ratio of oxygen to silicon in the upper surface of the second insulating film is higher by 5% or more than in the bottom surface of the second insulating film. |