| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_cef1f43aa7ea51e6a592082d9f2a3103 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-3011
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5328
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53276
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53238 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5222
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7682
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76831 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-4763
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 |
| filingDate |
2006-03-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fd8c610e61a6899518bf7bc474a91f3b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c708f1b8ffd01a4375700adf2d9bf84d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1ae98d80cb24e76f7d5e665da88d068e |
| publicationDate |
2006-07-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2006160353-A1 |
| titleOfInvention |
Methods for selective integration of airgaps and devices made by such methods |
| abstract |
Damascene stacks for use in semiconductor devices and methods for making such stacks are disclosed. An example damascene stack includes a substantially planar lower liner layer and a patterned sacrificial dielectric layer disposed on top of the lower liner layer, where the patterned sacrificial dielectric layer includes an interconnect structure of the damascene stack. The example damascene stack further includes a substantially planar upper liner layer disposed on top of the patterned sacrificial dielectric layer, where the upper liner layer being formed of a material that is resistant to etching by a first etch compound. There is at least one plug-hole in the upper liner layer, where the at least one plug-hole is (i) adjacent to the interconnect structure and (ii) formed by locally converting a portion of the upper liner layer to be etchable by the first etch compound and removing the locally converted portion of the upper liner layer using the first etch compound. The example damascene stack still further includes at least one air gap formed by removing at least a portion of the sacrificial dielectric layer through the at least one plug-hole in said upper liner layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8981876-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7560388-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8172980-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10937694-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013323930-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9613862-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7241693-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7485581-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007123017-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9385684-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008314521-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10903118-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007122977-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007123016-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006234506-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7390749-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007123053-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10032668-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10957588-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10388565-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9490418-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9490771-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007007637-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9859205-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011163446-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9633896-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9401692-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7432189-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8962443-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8497203-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8796904-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8187412-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2012193795-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103579092-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8866202-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9243316-B2 |
| priorityDate |
2003-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |