| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d01259e3a8df706081ff13ce300cdaf7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b7ed558404f7d683be680944da471f6f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9a02d6b21952a5a4e42ea56921ba831d |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-743 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-07
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-74 |
| filingDate |
2004-01-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ead6b7c403c655c50334079ca5177571
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3a88cb644bf2621be9ecc6e3b4c3982b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_23a074645b9afc3d7975c5aa6e6f5989 |
| publicationDate |
2006-07-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2006160339-A1 |
| titleOfInvention |
Soi contact structure(s) and corresponding production method |
| abstract |
Disclosed are an arrangement and a production method for electrically connecting active semiconductor structures in or on a monocrystalline silicon layer ( 12 ) located on the front face (V) of silicon-on-insulator semiconductor wafers (SOI, 10 ) to the substrate ( 13 ). The electrical connection ( 20 ) is made through an insulator layer ( 11 ). A stack of layers ( 30 to 32, 70 to 72 ) is disposed above the connection piece ( 20 ) on the insulator layer ( 11 ). |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007164443-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7485926-B2 |
| priorityDate |
2003-01-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |