http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006160032-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_be055db3c1a09879df07379ba969e223 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-2041 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate | 2006-03-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3c227385de57a4cdfddedb2fc25019f1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4cdd139ea6e212b050c54fc6f2246ed9 |
| publicationDate | 2006-07-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-2006160032-A1 |
| titleOfInvention | Pattern formation method and exposure system |
| abstract | After forming a resist film made from a chemically amplified resist material, pattern exposure is carried out by irradiating the resist film with exposing light while supplying, between a projection lens and the resist film, a solution of water (having a refractive index of 1.44) that includes an antifoaming agent and is circulated and temporarily stored in a solution storage. After the pattern exposure, the resist film is subjected to post-exposure bake, and the resultant resist film is developed with an alkaline developer. Thus, a resist pattern made of an unexposed portion of the resist film can be formed in a good shape. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7537879-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006110677-A1 |
| priorityDate | 2003-05-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 38.