http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006151435-A1

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filingDate 2003-09-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a022bb99a34af17ba061782659a815e8
publicationDate 2006-07-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2006151435-A1
titleOfInvention Surface processing method
abstract This invention relates to an efficient surface processing method. n In one embodiment of the invention, a laminated body 4 comprising a sample material 1 , an intermediate layer 2 formed on a surface of the sample material 1 , and an SOG layer 3 formed on the surface of the intermediate layer 2 is used. First, the surface of the SOG layer 3 is irradiated with an electron beam so as to expose part of the SOG layer. Next, exposed parts 31 of the SOG layer 3 are eliminated by etching. As a result, finely detailed unevenness can be formed at the surface of the SOG layer 3. n The depth of the exposed parts 31 can be controlled by changing the acceleration voltage of the electron beam. It is therefore possible to form three-dimensional shapes of different depths. n After forming unevenness at the surface of the SOG layer 3 , the intermediate layer 2 and the sample material 1 can be eliminated in order using, for example, an oxygen ion beam. As a result, the same unevenness as at the surface of the SOG layer 3 can be formed at the surface of the sample material 1.
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