| abstract |
A vertical organic thin film transistor is provided along with an organic light-emitting transistor, which is characterized in that an active layer is formed of a p-type organic semiconductor compound having a dielectric constant of 3.5 or more, and work function values of an anode and a cathode are different from each other. The vertical organic thin film transistor is advantageous because it exhibits excellent current-voltage properties due to a short channel length, and has simple fabrication processes. Also, in the vertical organic thin film transistor, current properties in response to the gate voltage are of an enhancement type. Therefore, the vertical organic thin film transistor may be fabricated into the organic light-emitting transistor through a simple process. |