http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006141753-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_71cfe90647aaf9bb2f39888a598cca3e |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02458 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0237 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02505 |
| classificationIPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-20 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 |
| filingDate | 2006-02-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5cfb13bd7bcc2186be849a6746bd988b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e7c9e6bb3d8c507d77985088b9abbe36 |
| publicationDate | 2006-06-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-2006141753-A1 |
| titleOfInvention | Epitaxial structure of gallium nitride series semiconductor device and process of manufacturing the same |
| abstract | An epitaxial stricture of a gallium nitride series semiconductor device and a process of forming the same are described. A first buffer layer of gallium nitride is epitaxially formed on a substrate at a first temperature. A second buffer layer of indium gallium nitride is formed on the first buffer layer at a second temperature. The second temperature increases up to a third temperature, during which precursors including In(CH 3 ) 3 and NH 3 are used for surface treatment. A high-temperature gallium nitride is formed at the third temperature. The buffer layer and the way to form such a buffer layer allow improved crystal configuration and lowered defect density, thereby increasing the performance and service life of a semiconductor device. |
| priorityDate | 2004-05-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 26.