Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f1d9af64e43d1b4bf5d2cd08a99da9d8 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1095 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0696 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0653 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7802 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26586 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66712 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0634 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7811 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
filingDate |
2006-01-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2bf3aba2c8dfebde91de08d2bb52485b |
publicationDate |
2006-06-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-2006134867-A1 |
titleOfInvention |
Technique for forming the deep doped columns in superjunction |
abstract |
A method of manufacturing a semiconductor device is disclosed and starts with a semiconductor substrate having a heavily doped N region at the bottom main surface and having a lightly doped N region at the top main surface. There are a plurality of trenches in the substrate, with each trench having a first extending portion extending from the top main surface towards the heavily doped region. Each trench has two sidewall surfaces in parallel alignment with each other. A blocking layer is formed on the sidewalls and the bottom of each trench. Then a P type dopant is obliquely implanted into the sidewall surfaces to form P type doped regions. The blocking layer is then removed. The bottom of the trenches is then etched to remove any implanted P type dopants. The implants are diffused and the trenches are filled. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111524798-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016027874-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011084333-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8084811-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I459445-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9466730-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104599972-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015185635-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102413641-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20220074529-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102738242-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9564515-B2 |
priorityDate |
2003-05-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |