http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006134867-A1

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publicationDate 2006-06-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2006134867-A1
titleOfInvention Technique for forming the deep doped columns in superjunction
abstract A method of manufacturing a semiconductor device is disclosed and starts with a semiconductor substrate having a heavily doped N region at the bottom main surface and having a lightly doped N region at the top main surface. There are a plurality of trenches in the substrate, with each trench having a first extending portion extending from the top main surface towards the heavily doped region. Each trench has two sidewall surfaces in parallel alignment with each other. A blocking layer is formed on the sidewalls and the bottom of each trench. Then a P type dopant is obliquely implanted into the sidewall surfaces to form P type doped regions. The blocking layer is then removed. The bottom of the trenches is then etched to remove any implanted P type dopants. The implants are diffused and the trenches are filled.
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