| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_223382dbac3444c42ed7f62c1ac42ac0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_953715ba4b831b55cee028f150b65806
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_79c3601b8aaf08aaa9c26d5f3c8d2f18 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-405 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-36 |
| filingDate |
2004-11-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_85cf59264ed400fb9ca218382f6f64c4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_aa92f5cbff58b7f432c49e13bf44ccf3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_95ed34750668ce77a671b0038604423a |
| publicationDate |
2006-05-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2006110688-A1 |
| titleOfInvention |
Etching process compatible with DUV lithography |
| abstract |
An etching process compatible with DUV lithography is described. A mask layer is previously formed over a material layer to be etched through a DUV lithography process of 193 nm or 157 nm. Then, plasma etching is performed to pattern the material layer using the mask layer as an etching mask, wherein the etching gas causes a protective layer to form on the surface of the mask layer. The etching gas of the plasma etching includes at least a halogen-containing gas and Xe, wherein the halogen can be F, Cl, Br or a combination thereof. |
| priorityDate |
2004-11-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |