| abstract |
Semiconductor devices are described that include a semiconductor layer that contains a trans-1,2-bis(acenyl)ethylene compound. The acenyl group is selected from 2-naphtyl, 2-anthracenyl, or 2-tetracenyl. Additionally, methods of making semiconductor devices are described that include depositing a semiconductor layer that contains a trans-1,2-bis(acenyl)ethylene compound. |