| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76807
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76835
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-022
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76822
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02282
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31612 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 |
| filingDate |
2004-10-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4c5dea4ecb5214104192eb6e442e36c0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e77ca27a3049eb0cd5f6bd6febc346bd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3fa2681c0cb44f2f19f94b85b67ff9c3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_01652b07fd1e78082f4d5bb6156a53b6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b51e30378bb17ea6392f81495306b86d |
| publicationDate |
2006-04-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2006084279-A1 |
| titleOfInvention |
Method for forming a multi-layer low-K dual damascene |
| abstract |
A damascene structure and method for forming the same in a multi-density dielectric insulating layer the method including providing a substrate; forming at least a first layer comprising silicon oxide according to a first process having a first density; forming at least a second layer comprising silicon oxide according to a second process over the first layer having a second density less than the first density; etching a damascene opening through a thickness portion of the at least a first and the at least a second layer; and, filling the damascene opening to form a metal filled damascene. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009280653-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007190769-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7579271-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2020051909-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014103165-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9202786-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10825766-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11721606-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7910475-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011095427-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11158561-B2 |
| priorityDate |
2004-10-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |