Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a9032da416e8c32b9c01de3b84d8a76f http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fd26dff5c54d97daa8d009a56ac2bf16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6e37951ba7d1feeccf304003e2269a8d |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76232 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-00 |
filingDate |
2004-08-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_51287d2c9c8430b10cb9011372a2b47b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ab042c6d54abf70f82ba86b29f7a66d3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4ab331bf306a0559609b171293675c82 |
publicationDate |
2006-02-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-2006033179-A1 |
titleOfInvention |
Retrograde trench isolation structures |
abstract |
Methods are provided for making retrograde trench isolation structures with improved electrical insulation properties. One method comprises the steps of: forming a retrograde trench in a silicon substrate, and forming a layer of silicon oxide on the walls of the trench by thermal oxidation, such that the trench is sealed and a space is formed within the layer of silicon oxide. The space can contain a vacuum or any of a variety of gases depending upon conditions of the thermal oxidation step. Retrograde trench isolation structures containing a space are also provided. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017210613-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10000373-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10676351-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008160698-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11167984-B2 |
priorityDate |
2004-08-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |