http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006033179-A1

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filingDate 2004-08-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_51287d2c9c8430b10cb9011372a2b47b
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publicationDate 2006-02-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2006033179-A1
titleOfInvention Retrograde trench isolation structures
abstract Methods are provided for making retrograde trench isolation structures with improved electrical insulation properties. One method comprises the steps of: forming a retrograde trench in a silicon substrate, and forming a layer of silicon oxide on the walls of the trench by thermal oxidation, such that the trench is sealed and a space is formed within the layer of silicon oxide. The space can contain a vacuum or any of a variety of gases depending upon conditions of the thermal oxidation step. Retrograde trench isolation structures containing a space are also provided.
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